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  • Journal of Semiconductors
    • 創(chuàng)刊時(shí)間1980
    • 影響因子0.36
    • 發(fā)行周期月刊
    • 審稿周期1-3個(gè)月

    Journal of Semiconductors雜志 CSCD期刊 統(tǒng)計(jì)源期刊

    主管單位:中國科學(xué)院 主辦單位:中國科學(xué)院半導(dǎo)體研究所;中國電子學(xué)會(huì)

    《Journal of Semiconductors》是一本由中國科學(xué)院半導(dǎo)體研究所;中國電子學(xué)會(huì)主辦的一本電力類雜志,該刊是CSCD期刊、統(tǒng)計(jì)源期刊,主要刊載電力相關(guān)領(lǐng)域研究成果與實(shí)踐。該刊創(chuàng)刊于1980年,出版周期月刊,影響因子為0.36。該期刊已被CSCD 中國科學(xué)引文數(shù)據(jù)庫來源期刊(含擴(kuò)展版)、統(tǒng)計(jì)源期刊(中國科技論文優(yōu)秀期刊)、知網(wǎng)收錄(中)、維普收錄(中)、萬方收錄(中)、EI 工程索引(美)、CA 化學(xué)文摘(美)、SA 科學(xué)文摘(英)、JST 日本科學(xué)技術(shù)振興機(jī)構(gòu)數(shù)據(jù)庫(日)、Pж(AJ) 文摘雜志(俄)、劍橋科學(xué)文摘、國家圖書館館藏、上海圖書館館藏、文摘與引文數(shù)據(jù)庫、文摘雜志收錄。

    雜志介紹 征稿要求 數(shù)據(jù)統(tǒng)計(jì) 聯(lián)系方式 常見問題 推薦期刊

    Journal of Semiconductors雜志介紹

    本報(bào)是由中國電子學(xué)會(huì)主辦,中國科學(xué)院半導(dǎo)體研究所承辦的學(xué)術(shù)刊物,報(bào)道半導(dǎo)體物理學(xué)和半導(dǎo)體科學(xué)技術(shù)領(lǐng)域內(nèi)最新的科研成果和技術(shù)進(jìn)展,被EI、CA、SA等收錄,在中國科學(xué)院、國家科委、中共中央宣傳部和國家新聞出版署的期刊評(píng)比中多次獲獎(jiǎng)。主要欄目有:研究快報(bào)、研究論文、研究簡報(bào)、技術(shù)進(jìn)展等。

    《半導(dǎo)體學(xué)報(bào)》是中國電子學(xué)會(huì)和中國科學(xué)院半導(dǎo)體研究所主辦的學(xué)術(shù)刊物。它報(bào)道半導(dǎo)體物理學(xué)、半導(dǎo)體科學(xué)技術(shù)和相關(guān)科學(xué)技術(shù)領(lǐng)域內(nèi)最新的科研成果和技術(shù)進(jìn)展,內(nèi)容包括半導(dǎo)體超晶格和微結(jié)構(gòu)物理,半導(dǎo)體材料物理,包括量子點(diǎn)和量子線等材料在內(nèi)的新型半導(dǎo)體材料的生長及性質(zhì)測試,半導(dǎo)體器件物理,新型半導(dǎo)體器件,集成電路的CAD設(shè)計(jì)和研制,新工藝,半導(dǎo)體光電子器件和光電集成,與半導(dǎo)體器件相關(guān)的薄膜生長工藝,性質(zhì)和應(yīng)用等等。本刊與物理類期刊和電子類期刊不同,是以半導(dǎo)體和相關(guān)材料為中心的,從物理,材料,器件到應(yīng)用的,從研究到技術(shù)開發(fā)的,跨越物理和信息兩個(gè)學(xué)科的綜合性學(xué)術(shù)刊物?!栋雽?dǎo)體學(xué)報(bào)》發(fā)表中、英文稿件?!栋雽?dǎo)體學(xué)報(bào)》被世界四大檢索系統(tǒng)(美國工程索引(EI),化學(xué)文摘(CA),英國科學(xué)文摘(SA),俄羅斯文摘雜志(РЖ))收錄。

    本刊主要資助項(xiàng)目有:國家自然科學(xué)基金、國家高技術(shù)研究發(fā)展計(jì)劃、國家重點(diǎn)基礎(chǔ)研究發(fā)展計(jì)劃、國家教育部博士點(diǎn)基金、中國博士后科學(xué)基金、北京市自然科學(xué)基金、國防科技技術(shù)預(yù)先研究基金、國家杰出青年科學(xué)基金、河北省自然科學(xué)基金、天津市自然科學(xué)基金。

    本刊主要資助課題有:國家重點(diǎn)基礎(chǔ)研究發(fā)展計(jì)劃(G20000683)、國家重點(diǎn)基礎(chǔ)研究發(fā)展計(jì)劃(2002CB311903)、國家自然科學(xué)基金(69896260)、國家自然科學(xué)基金(60336010)、國家重點(diǎn)基礎(chǔ)研究發(fā)展計(jì)劃(G2002CB311901)、國家自然科學(xué)基金(60736033)、國家自然科學(xué)基金(60436030)、國家高技術(shù)研究發(fā)展計(jì)劃(2002AA1Z1460)、國家高技術(shù)研究發(fā)展計(jì)劃(2009AA011605)、國家自然科學(xué)基金(60475018)。

    Journal of Semiconductors雜志征稿要求

    1. By submitting a manuscript, the authors affirm that the manuscript has not been published previously and is not currently under consideration for publication elsewhere. The authors also affirm that the manuscript does not contain the content of the results of others. Copyright of the manuscript including CD-ROM, Internet and other media is assigned to the editorial office of JoS from the date on which the manuscript is accepted for publication.

    2.Manuscript must be written in English, and should be neatly typed, double spaced, with A4 paper size.

    3.Manuscript should have a clear point of view and reliable data, and should be concise and focused. If the manuscript contains similar or closely relevant contents to the published papers, the authors should show them in references.

    1)Title, Author, Institution, and Abstract

     * Title: The title should be concise, precise but informative, and should not be over 10 substantive words.  * Author: The names of authors should be confirmed before submitting a manuscript and cannot be changed after submission.  * Institution: The full name of the institution, the city where it is located, and the postal code are needed.

    * Abstract: The purpose, method, results, and conclusion of the research work should be briefly presented in third person. The abstract should not normally exceed 200 words. As the abstract is not part of the text, it should be complete in itself; no table numbers, figure numbers, references or displayed mathematical expressions should be included.

    2).Key words and PACS or EEACC numbers

    * Key words: Between 3 and 6 key words should be provided. * PACS or EEACC numbers: Between 1 and 3 numbers should be given.

    3). Foundation and Contract number:The supporting organization and contract number should be given.

    4). Abbreviations, Acronyms, and Units of measure

    * Abbreviations and Acronyms: All acronyms and abbreviations should be clearly explained when they first appear in the abstract or text. * Units of Measure: The SI system should be used, and all units used should be consistent throughout the manuscript.

    5). Figures and Tables

    * Figures (Including photographs): Figures should be arranged sequentially with Arabic numerals, and should be clear, easy to read and of the best possible quality. The width of the figures should be not over 8 cm, and the lines must be smooth, clean and uniform. The tick marks on figure axes should point inward. Characters should appear as they would be set in the main body of the manuscript. Photographs should be in good contrast with details clearly distinguishable. We will normally use figures as submitted; it is therefore your responsibility to ensure that they are legible and technically correct. The use of colour in figures is freely available in the online version of the manuscript, but authors will be charged RMB 1 200 per colour journal page in the printed version.

    * Tables: Tables should be numbered serially and referred to in the text by number (Table 1, etc). Concise and precise three-line tables should be used.

    6). References

    References should be numbered consecutively, in the order in which they appear in the text, with square brackets enclosing the number. The information about the references cited should be provided in its entirety. References should not contain un-published data.

    Normally, at least 15 references should be provided, among which at least 10 references should be published in the past 5 years.

    Journal of Semiconductors雜志數(shù)據(jù)統(tǒng)計(jì)

    歷年影響因子和發(fā)文量

    主要機(jī)構(gòu)發(fā)文分析

    機(jī)構(gòu)名稱 發(fā)文量 主要研究主題
    中國科學(xué)院 1375 半導(dǎo)體;激光;激光器;砷化鎵;GAAS
    清華大學(xué) 433 電路;集成電路;CMOS;半導(dǎo)體;VLSI
    復(fù)旦大學(xué) 371 電路;硅;半導(dǎo)體;集成電路;CMOS
    北京大學(xué) 369 半導(dǎo)體;MOSFET;電路;硅;發(fā)光
    中國科學(xué)院微電子研究所 256 晶體管;電路;SOI;HEMT;INGAP/GAAS_HBT
    西安電子科技大學(xué) 217 電路;晶體管;4H-SIC;集成電路;MOSFET
    浙江大學(xué) 208 單晶;直拉硅;硅;氧沉淀;硅單晶
    東南大學(xué) 161 CMOS;MEMS;感器;半導(dǎo)體;傳感
    南京大學(xué) 125 發(fā)光;光致;光致發(fā)光;半導(dǎo)體;硅
    電子科技大學(xué) 123 擊穿電壓;LDMOS;RESURF;電路;耐壓

    Journal of Semiconductors雜志社聯(lián)系方式

    地址:北京市海淀區(qū)清華東路甲35號(hào)

    郵編:100083

    主編:李樹深

    常見問題

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    若用戶需要出版服務(wù),請(qǐng)聯(lián)系出版商,地址:北京市海淀區(qū)清華東路甲35號(hào),郵編:100083。